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April 1999
FDC6561AN
Dual N-Channel Logic Level PowerTrench TM MOSFET
General Description
These N-Channel Logic Level MOSFETs are
produced using Fairchild Semiconductor's advanced
PowerTrench process that has been especially tailored
to minimize the on-state resistance and yet maintain
low gate charge for superior switching performance.
These devices are well suited for all applications where
small size is desireable but especially low cost DC/DC
conversion in battery powered systems.
Features
2.5 A, 30 V. R DS(ON) = 0.095 ? @ V GS = 10 V
R DS(ON) = 0.145 ? @ V GS = 4.5 V
Very fast switching.
Low gate charge (2.1nC typical).
SuperSOT TM -6 package: small footprint (72% smaller than
standard SO-8); low profile (1mm thick).
SOT-23
SuperSOT TM -6
SuperSOT TM -8
SO-8
SOT-223
SOIC-16
D2
.56
D1
S1
1
G2
4
5
3
2
S2
SuperSOT -6
TM
pin 1
G1
6
1
Absolute Maximum Ratings
T A = 25°C unless otherwise note
Symbol
V DSS
V GSS
I D
Parameter
Drain-Source Voltage
Gate-Source Voltage - Continuous
Drain Current - Continuous
- Pulsed
Ratings
30
±20
2.5
10
Units
V
V
A
P D
Maximum Power Dissipation
(Note 1a)
0.96
W
(Note 1b)
(Note 1c)
0.9
0.7
T J ,T STG
Operating and Storage Temperature Range
-55 to 150
°C
THERMAL CHARACTERISTICS
R θ JA
R θ JC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
130
60
°C/W
°C/W
? 1999 Fairchild Semiconductor Corporation
FDC6561AN Rev.C
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相关代理商/技术参数
FDC6561AN 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET Transistor Transistor Polarity:Du
FDC6561AN 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET DUAL NN SUPERSOT-6
FDC6561AN_Q 功能描述:MOSFET N-Channel 30V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDC6561AN-CUT TAPE 制造商:FAIRCHILD 功能描述:FDC6561AN Series 30 V 0.095 Ohm Dual N-Ch Logic Level PowerTrench Mosfet SSOT-6
FDC658AP 功能描述:MOSFET -30VSgl P-Chl LogLv PwrTrch MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDC658P 功能描述:MOSFET SSOT-6 P-CH -30V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDC658P 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P SUPERSOT-6
FDC658P 制造商:Fairchild Semiconductor Corporation 功能描述:30V N-CH. FET 50 MO SSOT6